CM75DY-34A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_09 Datasheet - Page 2

• Manufacturer Part Number: CM75DY-34A_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*
*
Note 1. I
I
I
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
1 : Case temperature (T
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
V
V
I
I
I
I
P
T
T
V
V
V
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
GES
j
stg
iso
EC(Note 1)
CES
C (Note 3)
GE(th)
CE(sat)
ies
oes
res
th(j-c)
th(j-c)
th(c-f)
G
G
rr (Note 1)
—
—
—
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Note 1)
(Note 1)
Q
R
E
, I
EM
, V
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
EC
, t
rr
& Q
C
Parameter
Parameter
), heat sink temperature (T
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
j
) should not increase beyond 150°C.
(Tj = 25
(Tj = 25
G-E Short
C-E Short
DC, T
Pulse
Operation
Pulse
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied (1/2 module)
C
C
E
E
C
f
CE
CE
GE
CC
CC
GE
G
) measured point is just under the chips.
°
= 7.5mA, V
= 75A, V
= 75A
= 75A, V
GE
C, unless otherwise specified)
= 25°C
= 6.4Ω, Inductive load
°
= V
C, unless otherwise specified)
= 10V
= 0V
= 1000V, I
= 1000V, I
= ±15V
C
= V
= 111°C
CES
GES
*1
GE
GE
, V
, V
CE
GE
= 15V
= 0V
C
C
*1
CE
= 10V
= 75A, V
= 75A
= 0V
= 0V
Test conditions
Conditions
*1
*1
2
GE
= 15V
j
) does not exceed T
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
*1,*2
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
5.5
6.4
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—
—
—
—
—
—
—
—
—
—
—
—
—
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—
rating.
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
3.5 ~ 4.5
CM75DY-34A
Ratings
Limits
0.022
1700
3500
Typ.
2.45
±20
150
150
780
310
500
7.0
2.2
7.5
75
75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
18.5
0.16
0.29
200
150
550
350
300
8.5
2.0
2.8
2.1
0.4
3.0
64
—
—
—
—
1
Feb. 2009
N • m
Vrms
K/W
Unit
Unit
mA
µA
nC
µC
nF
°C
°C
ns
W
V
Ω
V
V
A
A
V
V
g