APT8011JLL_04 ADPOW [Advanced Power Technology], APT8011JLL_04 Datasheet - Page 2

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APT8011JLL_04

Manufacturer Part Number
APT8011JLL_04
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
C
t
t
R
R
C
C
V
dv
Q
Q
E
E
Q
d(on)
d(off)
E
E
I
Q
t
SM
I
oss
t
t
SD
iss
rss
S
on
off
on
off
rr
/
gs
gd
r
f
JC
JA
g
rr
dt
0.20
0.16
0.12
0.08
0.04
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.05
0.3
0.1
10
-4
3
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -I
GS
S
= -I
D
= 0V, I
10
51A
RECTANGULAR PULSE DURATION (SECONDS)
-3
D
51A
, dl
S
, dl
S
= -I
/dt = 100A/µs)
SINGLE PULSE
S
D
/dt = 100A/µs)
51A
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
)
10
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
-2
Test Conditions
DD
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 533V, V
= 533V, V
= 51A, R
= 51A, R
dt
V
V
= 51A @ 25°C
= 51A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
G
GS
= 0.6
= 400V
= 400V
= 25V
= 10V
= 15V
= 0V
j
G
G
= +25°C, L = 2.77mH, R
GS
GS
= 5
= 5
= 15V
I
= 15V
S
10
-1
-
I
D
51A
di
Note:
/
dt
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
700A/µs
1.0
G
t 1
= 25 , Peak I
9480
1890
1390
1545
2095
1800
1000
t 2
TYP
TYP
TYP
340
650
100
525
23
23
83
19
34
V
R
t 1
/ t 2
800V
MAX
MAX
MAX
0.18
L
204
1.3
40
51
10
10
= 51A
APT8011JLL
T
J
150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
J
C

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