BC856ALT-1 ON Semiconductor, BC856ALT-1 Datasheet - Page 3
BC856ALT-1
Manufacturer Part Number
BC856ALT-1
Description
General Purpose Transistors(PNP Silicon)
Manufacturer
ON Semiconductor
Datasheet
1.BC856ALT-1.pdf
(8 pages)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–2.0
–1.6
–1.2
–0.8
–0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
–0.4
–0.2
I C =
–10 mA
–0.02
–0.6
V CE = –10 V
T A = 25 C
–0.5 –1.0 –2.0
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
–1.0
I C , COLLECTOR CURRENT (mAdc)
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C = –20 mA
–0.1
–2.0
I B , BASE CURRENT (mA)
I C = –50 mA
–5.0 –10
–4.0 –6.0
C ib
C ob
–1.0
–20
T A = 25 C
–10
I C = –200 mA
T A = 25 C
I C = –100 mA
–50 –100 –200
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1
–20 –30 –40
–10
BC857/BC858
–20
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
400
300
200
150
100
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
–0.5
–0.1 –0.2
Figure 4. Base–Emitter Temperature Coefficient
T A = 25 C
Figure 6. Current–Gain – Bandwidth Product
–0.2
Figure 2. “Saturation” and “On” Voltages
–55 C to +125 C
–1.0
–0.5 –1.0 –2.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mA)
–2.0 –3.0
V BE(on) @ V CE = –10 V
–1.0
V CE(sat) @ I C /I B = 10
V BE(sat) @ I C /I B = 10
–5.0
–5.0
–10
–10
–10
–20
–20 –30
V CE = –10 V
T A = 25 C
–50 –100
–100
–50
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