BC856ALT-1 ON Semiconductor, BC856ALT-1 Datasheet - Page 3

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BC856ALT-1

Manufacturer Part Number
BC856ALT-1
Description
General Purpose Transistors(PNP Silicon)
Manufacturer
ON Semiconductor
Datasheet
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–2.0
–1.6
–1.2
–0.8
–0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
–0.4
–0.2
I C =
–10 mA
–0.02
–0.6
V CE = –10 V
T A = 25 C
–0.5 –1.0 –2.0
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
–1.0
I C , COLLECTOR CURRENT (mAdc)
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C = –20 mA
–0.1
–2.0
I B , BASE CURRENT (mA)
I C = –50 mA
–5.0 –10
–4.0 –6.0
C ib
C ob
–1.0
–20
T A = 25 C
–10
I C = –200 mA
T A = 25 C
I C = –100 mA
–50 –100 –200
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1
–20 –30 –40
–10
BC857/BC858
–20
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
400
300
200
150
100
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
–0.5
–0.1 –0.2
Figure 4. Base–Emitter Temperature Coefficient
T A = 25 C
Figure 6. Current–Gain – Bandwidth Product
–0.2
Figure 2. “Saturation” and “On” Voltages
–55 C to +125 C
–1.0
–0.5 –1.0 –2.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mA)
–2.0 –3.0
V BE(on) @ V CE = –10 V
–1.0
V CE(sat) @ I C /I B = 10
V BE(sat) @ I C /I B = 10
–5.0
–5.0
–10
–10
–10
–20
–20 –30
V CE = –10 V
T A = 25 C
–50 –100
–100
–50
3

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