XR1007_0610 MIMIX [Mimix Broadband], XR1007_0610 Datasheet

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XR1007_0610

Manufacturer Part Number
XR1007_0610
Description
11.0-17.0 GHz GaAs MMIC Receiver
Manufacturer
MIMIX [Mimix Broadband]
Datasheet
11.0-17.0 GHz GaAs MMIC
Receiver
Features
General Description
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise
figure of 2.2 dB and 20.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer. The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
October 2006 - Rev 13-Oct-06
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Electrical Characteristics (Ambient Temperature T = 25
(1) Measured using constant current.
(2) Guaranteed specifications from 12 to 15 GHz.
Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
Gate Bias Voltage (Vg4) Mixer, Doubler
Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
2
LO
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
)
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Parameter
their obligation to be compliant with U.S. Export Laws.
1
2
Chip Device Layout
Absolute Maximum Ratings
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Supply Voltage (Vd)
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Units
dBm
dBm
VDC
VDC
VDC
VDC
VDC
GHz
GHz
GHz
dBc
mA
mA
dB
dB
dB
dB
Min.
11.0
10.0
15.0
-1.2
-1.2
-1.2
DC
9.0
-
-
-
-
-
-
-
-
-
40.0/40.0
Typ.
15.0
13.5
+3.0
20.0
+4.0
+4.0
+4.0
-0.3
-0.1
-0.5
100
2.0
2.2
80
-
-
o
+6.0 VDC
250, 200 mA
+0.3 VDC
-65 to +165
-55 to MTTF Table
MTTF Table
C)
+17 dBm
Max.
+5.0
+5.0
+0.1
+0.1
+0.1
17.0
19.0
TBD
120
150
3.0
-
-
-
-
-
-
R1007
3
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XR1007_0610 Summary of contents

Page 1

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise ...

Page 2

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Receiver Measurements 14REC0607, USB Conv. Gain (dB) and Im. Rej (dBc -10 -12 -14 -16 -18 ...

Page 3

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Receiver Measurements (cont.) LSB, PRF dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0 RC, 08 AUG 2005: IIP3 avg (dBm) vs. RF ...

Page 4

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Mechanical Drawing 2.000 (0.079) 1.615 1 (0.064) 0.0 0.0 Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside ...

Page 5

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is ...

Page 6

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 App Note [3] USB/LSB Selection LSB IF2 An alternate method of Selection of USB or LSB: In Phas e Combiner o -90 IF2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, ...

Page 7

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Block Diagram and Schematics Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix ...

Page 8

GHz GaAs MMIC Receiver October 2006 - Rev 13-Oct-06 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following ...

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