P4C163 PYRAMID [Pyramid Semiconductor Corporation], P4C163 Datasheet - Page 3

• Manufacturer Part Number: P4C163
• Description: ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage
n/a = Not Applicable
DATA RETENTION CHARACTERISTICS (P4C163L, Military Temperature Only)
*T
§
†
DATA RETENTION WAVEFORM
Document # SRAM120 REV C
Symbol
t
This parameter is guaranteed but not tested.
Symbol
RC
V
I
t
t
A
CCDR
CDR
R
I
= +25°C
I
I
I
DR
†
= Read Cycle Time
SB1
CC
CC
SB
V
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Dynamic Operating
Current – 25
Dynamic Operating
Current – 35, 45
Standby Power Supply
Current (TTL Input Levels) CE
Standby Power Supply
Current
(CMOS Input Levels)
CC
for Data Retention
Parameter
Parameter
CE
CE
or V
V
Outputs Open
V
Outputs Open
CE
f = Max., Outputs Open
CE
CE
f = 0, Outputs Open,
V
CC
CC
IN
1
2
1
1
2
2
IN
= Max., f = Max.,
= Max., f = Max.,
V
Test Condition
V
0.2V, V
V
V
V
V
CC
0.2V
LC
IH
HC
Test Conditions
IL
LC
– 0.2V or
, V
or V
or
, V
or
CC
CC
IN
IN
= Max.,
= Max.,
V
V
CC
HC
– 0.2V
(2)
Com’l.
Com’l.
Com’l.
Com’l.
Mil.
Mil.
Mil.
Mil.
2.0
t
Min
RC
0
§
Min
—
—
—
—
—
—
—
—
2.0V
10
P4C163
Typ.*
V
CC
Max
145
125
120
=
95
40
35
18
20
3.0V
15
Min
—
—
—
—
—
—
—
—
2.0V
200
P4C163L
V
Max
CC
=
Max
3.0V
300
145
N/A
120
N/A
N/A
N/A
40
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P4C163/163L
Unit
Unit
µA
ns
ns
mA
mA
mA
mA
V