K9K8G08U0M Samsung, K9K8G08U0M Datasheet - Page 43

• Manufacturer Part Number: K9K8G08U0M
• Description: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
• Manufacturer: Samsung

R/B
I/O
Figure 15. Two-Plane Block Erase Operation
Data
Input
R/B
I/O
Figure 14. Two-Plane Page Program
Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by
three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane.
The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/
Busy status bit (I/O 6).
Two-plane erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3 separately.
For example, two-plane erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane erase operation into plane 0
and plane 1 or into plane 2 and plane 3 is allowed.
K9WAG08U1M
K9K8G08U0M
X
0 ~ 7
NOTE : Two-plane block erase into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
NOTE : It is an example for two-plane page program into plane 0~1(In this case, A
plane 2 ~3 is same. two-plane page program into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
60h
NOTE : 1. It is noticeable that same row address except for A
80h
80h
A
A
A
A
2.Any command between 11h and 81h is prohibited except 70h and FFh.
12
18
19
30
Address (3 Cycle)
~ A
~ A
Address & Data Input
A
A
A
A
A
0
12
18
19
30
17 :
29 :
~ A
:
~ A
~ A
:
Fixed ’Low’
Fixed ’Low’
Fixed ’Low’
Valid
(2048 Block)
Block 4092
Block 4094
11 :
17 :
29 :
Block 0
Block 2
Plane 0
:
:
Valid
Fixed ’Low’
Fixed ’Low’
Fixed ’Low’
Valid
60h
11h
11h
A
A
A
A
A
Address (3 Cycle)
12
18
19
30
30
Note2
~ A
~ A
t
DBSY
81h
17 :
29 :
:
:
:
Fixed ’High’
must be same as previous A
Must be same as previous A
Fixed ’Low’
valid
18
43
81h
(2048 Block)
Block 4093
Block 4095
is applied to the two blocks
Block 1
Block 3
Plane 1
D0h
Address & Data Input
A
A
A
A
A
0
12
18
19
30
30
~ A
~ A
~ A
is low), and the method for two-plane page program into
11 :
17 :
29 :
:
:
Fixed ’High’
30
30
Valid
Valid
Must be same as previous A
Valid
10h
t
BERS
FLASH MEMORY
10h
70h
t
PROG
Preliminary
30
I/O 0
Fail
"1"
"0"
70h
Pass