HMC263LP4E_09 HITTITE [Hittite Microwave Corporation], HMC263LP4E_09 Datasheet

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HMC263LP4E_09

Manufacturer Part Number
HMC263LP4E_09
Description
GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 2
8
Typical Applications
The HMC263LP4E is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (@ Vdd = +3.0V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v01.0709
= +25° C, Vdd = +3V
Order On-line at www.hittite.com
Min.
19
24 - 27
0.03
Typ.
2.0
21
12
10
16
58
6
9
Max.
3.0
27
77
Features
Low Noise Figure: 2.2 dB
High Gain: 20 dB
Single Positive Supply: +3V or +5V
DC Blocked RF I/Os
No External Matching
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC263LP4E is a GaAs MMIC
Amplifi er (LNA) which covers the frequency range
of 24 to 36 GHz and is housed in a leadless plastic
SMT package. The HMC263LP4E utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3V @ 58 mA with a noise fi gure of
2.2 dB. The HMC263LP4E may be used in conjunc-
tion with HMC264LC3B or HMC265LM3 mixers to
realize a millimeterwave system receiver. The RF I/Os
are DC blocked and matched to 50 Ohms requiring no
external components.
Min.
17
27 - 32
Typ.
0.03
2.2
19
58
11
18
9
9
8
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Max.
3.0
23
77
HMC263LP4E
Min.
15
32 - 36
0.03
Typ.
2.5
17
11
12
20
58
9
9
Max.
4.0
20
77
Low Noise
dB/°C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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