HMC475ST89E HITTITE [Hittite Microwave Corporation], HMC475ST89E Datasheet - Page 5

• Manufacturer Part Number: HMC475ST89E
• Description: InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

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5
Pin Descriptions
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Recommended Component Values for Key Application Frequencies
Supply Voltage (Vs)
R
R
Pin Number
BIAS
BIAS
2, 4
Component
V
P
1
3
ALUE
OWER
C1, C2
L1
R
ATING
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Function
9.1 Ω
OUT
GND
¼ W
8V
IN
0.01 μF
270 nH
50
18 Ω
½ W
9V
These pins and package bottom must be connected to
RF output and DC Bias (Vcc) for the output stage.
100 pF
56 nH
v01.0107
An off chip DC blocking capacitor is required.
27 Ω
½ W
10V
900
Order On-line at www.hittite.com
This pin is DC coupled.
43 Ω
12V
1 W
RF/DC ground.
100 pF
Description
18 nH
1900
Frequency (MHz)
Note:
1. External blocking capacitors are required on
2. R
HMC475ST89
RFIN and RFOUT.
MMIC AMPLIFIER, DC - 4.5 GHz
100 pF
18 nH
2200
BIAS
provides DC bias stability over temperature.
InGaP HBT GAIN BLOCK
100 pF
15 nH
2400
Interface Schematic
100 pF
/
8.2 nH
3500
475ST89E
100 pF
6.8 nH
4500