BT152-500RT_11 NXP [NXP Semiconductors], BT152-500RT_11 Datasheet - Page 6

• Manufacturer Part Number: BT152-500RT_11
• Description: High junction temperature capability Very high current surge capability
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
6. Characteristics
Table 6.
BT152-500RT
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
Fig 7.
T
GT
D
I
GT(25 C)
/dt
I
GT
3
2
1
0
junction temperature
Normalized gate trigger current as a function of
50
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on time
commutated turn-off time
0
50
100
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T
j
( C)
Conditions
V
Figure 7
V
see
T
I
V
Figure 11
V
see
V
T
V
waveform; gate open circuit;
see
I
dI
V
V
dV
T
TM
j
j
D
D
D
D
D
DM
DM
R
G
= 40 A; T
150
= 25 °C; see
= 125 °C; V
D
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 500 V; I
= 500 V; T
= 25 V; (dI
= 40 A; V
/dt = 50 V/µs; R
Figure 8
Figure 11
Figure 12
Rev. 2 — 9 June 2011
= 335 V; T
= 335 V; T
T
j
T
G
= 25 °C; see
T
D
= 100 mA; T
= 100 mA; T
= 100 mA; T
j
T
R
= 100 mA; T
= 125 °C
/dt)
= 500 V; I
j
j
Figure 9
= 125 °C; exponential
= 125 °C; I
Fig 8.
500 V
M
I
L(25 C)
GK
= 30 A/µs;
I
L
= 100 Ω
3
2
1
0
G
junction temperature
Normalized latching current as a function of
50
j
j
Figure 10
j
= 25 °C; see
= 25 °C; see
= 100 mA;
TM
= 25 °C;
j
= 125 °C;
= 20 A;
0
Min
-
-
-
-
-
0.25
-
-
200
-
-
50
BT152-500RT
Typ
3
25
15
1.4
0.6
0.4
0.2
0.2
300
2
70
100
© NXP B.V. 2011. All rights reserved.
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T
j
( C)
Max
32
80
60
1.75
1.5
-
1
1
-
-
-
150
Unit
mA
mA
mA
V
V
V
mA
mA
V/µs
µs
µs
6 of 12
SCR