Q67000-S243 SIEMENS [Siemens Semiconductor Group], Q67000-S243 Datasheet
Q67000-S243
Related parts for Q67000-S243
Q67000-S243 Summary of contents
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... Enhancement mode • Logic Level • -0.8...-2.0 V GS(th) Type V DS BSS 84 -50 V Type Ordering Code BSS 84 Q62702-S568 BSS 84 Q67000-S243 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Gate source voltage Continuous drain current ° drain current, pulsed ° ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate- reverse side DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance - MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage -0. ...
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Power dissipation tot A 0.40 W 0.32 P tot 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area I = parameter : D = 0.01, ...
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Typ. output characteristics parameter µ ° -0. tot -0.26 I -0.24 D -0.22 -0.20 -0.18 -0.16 ...
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Drain-source on-resistance (on) j parameter -0. (on 98 typ -60 - ...