MW4IC915GNBR1_06 FREESCALE [Freescale Semiconductor, Inc], MW4IC915GNBR1_06 Datasheet - Page 2

• Manufacturer Part Number: MW4IC915GNBR1_06
• Description: RF LDMOS Wideband Integrated Power Amplifiers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MW4IC915NBR1 MW4IC915GNBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two - Tone
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
GSM Application
(P
GSM EDGE Application
(P
CDMA Application
(P
Select Documentation/Application Notes - AN1955.
out
out
out
= 15 W CW)
= 7.5 W CW)
= 3.75 W CW)
Test Methodology
Characteristic
Test Conditions
Characteristic
Rating
(T
C
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
DQ
DQ
DS
= 60 mA
= 240 mA
= 60 mA
= 240 mA
= 60 mA
= 240 mA
= 26 Vdc, I
DQ1
Rating
Symbol
PAE
IMD
G
IRL
3
= 90 mA, I
ps
DQ2
Symbol
Symbol
Package Peak Temperature
Min
V
R
29
29
—
—
V
T
DSS
T
= 240 mA, P
θJC
GS
stg
J
260
Typ
- 40
- 15
31
31
M3 (Minimum)
C2 (Minimum)
1 (Minimum)
out
- 65 to +175
- 0.5. +65
- 0.5. +15
Value
= 15 W PEP,
Value
Class
200
Freescale Semiconductor
7.3
1.7
7.3
1.8
7.4
1.9
(1)
Max
- 29
- 10
—
—
RF Device Data
°C/W
(continued)
Unit
Unit
Vdc
Vdc
°C
°C
Unit
Unit
dBc
°C
dB
dB
%