Q67040-S4003-A2 SIEMENS [Siemens Semiconductor Group], Q67040-S4003-A2 Datasheet

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Q67040-S4003-A2

Manufacturer Part Number
Q67040-S4003-A2
Description
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.Q67040-S4003-A2.pdf (8 pages)
SIPMOS
Semiconductor Group
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• d v /d t rated
• 175°C operating temperature
• also in SMD available
Type
BUZ111SL
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
L = 220 µH, T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
D
S
C
C
jmax
C
= 80 A, V
= 80 A, V
= 100 °C
= 25 °C
= 25 °C
= 175 °C
®
Power Transistor
DS
DD
j
= 25 °C
= 40 V, d i
= 25 V, R
V
55 V
DS
F
GS
/d t = 200 A/µs
= 25
jmax
I
80 A
D
jmax
R
0.01
DS(on )
1
Package
TO-220 AB
Symbol
I
I
E
I
E
d v /d t
V
P
D
Dpuls
AR
AS
AR
GS
tot
Pin 1
G
Values
320
700
250
Ordering Code
Q67040-S4003-A2
80
80
25
6
14
Pin 2
D
BUZ111SL
28/Jan/1998
SPP80N05L
Unit
A
mJ
A
mJ
kV/µs
V
W
Pin 3
S

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Q67040-S4003-A2 Summary of contents

Page 1

... T C Semiconductor Group I R Package D DS( 0.01 TO-220 AB Symbol Dpuls jmax AR E jmax tot 1 BUZ111SL SPP80N05L Pin 1 Pin 2 Pin Ordering Code Q67040-S4003-A2 Values Unit A 80 320 mJ 700 kV/µ 250 28/Jan/1998 ...

Page 2

Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max Input capacitance = MHz Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = 160 ...

Page 5

Power dissipation tot C 260 W 220 P 200 tot 180 160 140 120 100 100 120 140 Safe operating area ...

Page 6

Typ. output characteristics parameter µs p 180 P = 250W tot 140 D 120 100 0.0 ...

Page 7

Drain-source on-resistance (on) j parameter 4 0.032 R DS (on) 0.024 0.020 0.016 98% typ 0.012 0.008 0.004 0.000 -60 - Typ. capacitances C ...

Page 8

Avalanche energy parameter 220 µH GS 750 mJ 650 600 E AS 550 500 450 400 350 300 250 200 ...

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