Q67040-S4006-A2 SIEMENS [Siemens Semiconductor Group], Q67040-S4006-A2 Datasheet

no-image

Q67040-S4006-A2

Manufacturer Part Number
Q67040-S4006-A2
Description
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
SIPMOS
Semiconductor Group
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• d v /d t rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 104 SL
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
L = 666 µH, T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
D
S
C
C
C
jmax
C
= 12.5 A, V
= 12.5 A, V
= 25 °C
= 100 °C
= 25 °C
= 25 °C
= 175 °C
®
Power Transistor
j
DS
DD
= 25 °C
= 40 V, d i
= 25 V, R
V
55 V
DS
GS
F
/d t = 200 A/µs
= 25
jmax
I
12.5 A
D
jmax
R
0.12
DS(on )
1
Package
TO-220 AB
Symbol
I
I
E
I
E
d v /d t
V
P
D
Dpuls
AR
AS
AR
GS
tot
Pin 1
G
Values
12.5
12.5
Ordering Code
Q67040-S4006-A2
8.8
3.5
50
52
35
6
14
Pin 2
D
BUZ 104 SL
29/Jan/1998
SPP13N05L
Unit
A
mJ
A
mJ
kV/µs
V
W
Pin 3
S

Related parts for Q67040-S4006-A2

Q67040-S4006-A2 Summary of contents

Page 1

... Power dissipation °C C Semiconductor Group I R Package D DS(on ) 12.5 A 0.12 TO-220 AB Symbol Dpuls jmax AR E jmax tot 1 BUZ 104 SL SPP13N05L Pin 1 Pin 2 Pin Ordering Code Q67040-S4006-A2 Values Unit A 12.5 8 12.5 A 3.5 mJ kV/µ 29/Jan/1998 ...

Page 2

Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance 8 DS(on)max, D Input capacitance = MHz Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = ...

Page 5

Power dissipation tot tot 100 120 140 Safe operating area parameter ...

Page 6

Typ. output characteristics parameter µ ° 35W tot ...

Page 7

Drain-source on-resistance (on) j parameter 8 4 0.38 0. (on) 0.28 0.24 0.20 98% 0.16 typ 0.12 0.08 0.04 0.00 -60 - Typ. ...

Page 8

Avalanche energy parameter:I =12.5 A 666 µ 100 Drain-source breakdown ...

Related keywords