BD139-T60-K UTC [Unisonic Technologies], BD139-T60-K Datasheet - Page 2

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BD139-T60-K

Manufacturer Part Number
BD139-T60-K
Description
NPN POWER TRANSISTORS
Manufacturer
UTC [Unisonic Technologies]
Datasheet
BD139
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Power Dissipation (Ta=25°C)
Junction Temperature
Operating Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ABSOLUTE MAXIMUM RATING
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
BD139-10
BD139-16
TO-126
TO-251
SYMBOL
V
CE(SAT)
I
I
V
h
CBO
EBO
f
FE
BE
T
I
I
I
V
I
(See Fig.1)
I
I
I
E
E
C
C
C
C
C
CE
SYMBOL
=0, V
=0, V
=0, V
=150mA, V
=500 mA, I
=500 mA, V
=500 mA, V
(T
=2V (See Fig.1)
V
V
V
T
T
I
l
P
T
OPR
CBO
CEO
EBO
I
CM
BM
STG
J
C
=25°C, unless otherwise specified)
D
J
CB
CB
TEST CONDITIONS
EB
=30V
=30V, T
=5V
B
CE
CE
CE
=50mA
=2V
=2V
=5V, f=100MHz
J
=125°C
I
C
=5mA
I
I
C
C
=150mA
=500mA
NPN SILICON TRANSISTOR
RATINGS
-65~+150
-65~+150
+150
1.25
100
1.5
80
5
2
1
1
MIN
100
63
40
63
25
TYP
190
MAX
QW-R204-007.B
160
100
100
250
250
0.5
10
1
2 of 3
UNIT
°C
°C
°C
W
W
UNIT
V
V
V
A
A
A
MHz
nA
μA
nA
V
V

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