Q67060-S6087-A101 INFINEON [Infineon Technologies AG], Q67060-S6087-A101 Datasheet

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Q67060-S6087-A101

Manufacturer Part Number
Q67060-S6087-A101
Description
Smart Lowside Power Switch
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching
• µC compatible power switch for 12 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded
protection functions.
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
®
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Page 1
Short circuit
Protection
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
Source
Drain
HITFET
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
DS
AS
DS(on)
BTS 3142 D
2002-09-04
4.6
3.5
42
28
M
V
mΩ
A
J

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Q67060-S6087-A101 Summary of contents

Page 1

Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Analog driving possible Application • All kinds of resistive, inductive ...

Page 2

Maximum Ratings 25°C, unless otherwise specified j Parameter Drain source voltage Drain source voltage for short circuit protection T = -40...150°C j Continuous input current -0.2V ≤ V ≤ 10V IN V < -0. > ...

Page 3

Electrical Characteristics Parameter 25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150 Off-state drain current T = -40 ... +150° ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Turn-on time 4.7 Ω Turn-off time ...

Page 5

Block diagram Terms HITFET Input circuit (ESD protection) Gate Drive Input Inductive and overvoltage output clamp V bb Short circuit behaviour ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =55 K/W tot A thJA 3.5 3 2.5 2 SMD @ 6cm2 1.5 1 0.5 0 -50 -25 0 ...

Page 7

Typ. transfer characteristics I =f =12V; T =25° Jstart Typ. output characteristics I =f ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 70 A -40°C 50 25°C 85° 150° 0.5 1 1.5 2 2.5 11 Determination of I D(lim) ...

Page 9

... Package Ordering Code P-TO252-3-1 Q67060-S6087-A101 Page 9 BTS 3142 D 2002-09-04 ...

Page 10

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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