Q67060-S6087-A101 INFINEON [Infineon Technologies AG], Q67060-S6087-A101 Datasheet
Q67060-S6087-A101
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Q67060-S6087-A101 Summary of contents
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Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Analog driving possible Application • All kinds of resistive, inductive ...
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Maximum Ratings 25°C, unless otherwise specified j Parameter Drain source voltage Drain source voltage for short circuit protection T = -40...150°C j Continuous input current -0.2V ≤ V ≤ 10V IN V < -0. > ...
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Electrical Characteristics Parameter 25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150 Off-state drain current T = -40 ... +150° ...
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Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Turn-on time 4.7 Ω Turn-off time ...
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Block diagram Terms HITFET Input circuit (ESD protection) Gate Drive Input Inductive and overvoltage output clamp V bb Short circuit behaviour ...
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Maximum allowable power dissipation P = f(T ) resp. tot f =55 K/W tot A thJA 3.5 3 2.5 2 SMD @ 6cm2 1.5 1 0.5 0 -50 -25 0 ...
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Typ. transfer characteristics I =f =12V; T =25° Jstart Typ. output characteristics I =f ...
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Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 70 A -40°C 50 25°C 85° 150° 0.5 1 1.5 2 2.5 11 Determination of I D(lim) ...
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... Package Ordering Code P-TO252-3-1 Q67060-S6087-A101 Page 9 BTS 3142 D 2002-09-04 ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...