P2682-01 HAMAMATSU [Hamamatsu Corporation], P2682-01 Datasheet - Page 2

• Manufacturer Part Number: P2682-01
• Description: PbS photoconductive detector
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

2
Spectral response
Dark resistance, rise time temperature characteristics
S/N vs. chopping frequency
100
10
10
10
10
10
10
80
60
40
20
0
3
2
1
10
3
2
1
-20
1
1
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
SUPPLY VOLTAGE: 15 V
tr: 200 µs
RISE TIME
-10
ELEMENT TEMPERATURE
CHOPPING FREQUENCY (Hz)
25 ˚C
2
0
WAVELENGTH
DARK RESISTANCE
S/N
10
N
10
-10 ˚C
-20 ˚C
20
3
2
S
30
(µm)
2
(Typ. Ta=25 ˚C)
40
4
(˚C)
50
PbS photoconductive detector
(Typ.)
(Typ.)
10
60
5
KIRDB0047EB
KIRDB0049EB
KIRDB0279EA
3
S/N vs. supply voltage
Photo sensitivity temperature characteristic
Photo sensitivity linearity
800
600
400
200
10
10
10
10
10
10
10
10
10
0
-1
-2
-3
3
2
1
2
1
0
10
-20
0
-9
If voltage of higher than 60 V is applied,
the noise increases exponentially, de-
grading the S/N. The device should be
operated at 60 V or less.
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
-10
ELEMENT TEMPERATURE
10
DEPENDENT ON NEP
10
INCIDENT ENERGY (W/cm
P2532-01, P2682-01
-8
SUPPLY VOLTAGE
0
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
(Typ. Ta=25 ˚C, FULLY ILLUMINATED)
20
SIGNAL
10
10
-7
30
20
10
NOISE
30
-6
40
2
(V)
(Typ. Ta=25 ˚C)
40
10
(˚C)
2
50
-5
)
50
2
(Typ.)
10
60
60
KIRDB0048EB
KIRDB0050EA
-4
8
7
6
5
4
3
2
1
0
KIRDB0046EA