IPS812-05B IPS [IP SEMICONDUCTOR CO., LTD.], IPS812-05B Datasheet
IPS812-05B
Related parts for IPS812-05B
IPS812-05B Summary of contents
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... IP Semiconductor Co., Ltd. IPS812 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. ...
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... Junction to case th 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com = rated value) DRM gate open Tj = 125 ℃ 25℃ 25℃ DRM Tj = 125℃ RRM Parameter TO-220B IPS812-xxB IPS812-xxB 05 MAX 5 MAX 1.3 MAX 0.2 MAX 30 MAX 15 MIN 40 200 ...
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... PACKAGE MECHANICAL DATA TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS812-xxB Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 3 ...
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... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS812-xxB 4 ...