BZT52C6V2 SB00014/D4. Vishay, BZT52C6V2 SB00014/D4. Datasheet

no-image

BZT52C6V2 SB00014/D4.

Manufacturer Part Number
BZT52C6V2 SB00014/D4.
Description
case, reflow, power, package, process, max, mount, leaded, diode, zener, compatible, sod, voltage, Discretes (diodes,...
Manufacturer
Vishay
Datasheet
Small Signal Zener Diodes
Features
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
1)
2)
Thermal Characteristics
T
1)
Document Number 85760
Rev. 1.5, 21-Apr-05
• Silicon Planar Power Zener Diodes
• These diodes are also available in other
• The Zener voltages are graded according to the
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Zener current see table "
Characteristics "
Power dissipation
Power dissipation
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
amb
amb
Diode on ceramic substrate 0.7 mm; 2.5 mm
Diode on ceramic substrate 0.7 mm; 5 mm
Valid provided that electrodes are kept at ambient temperature
case styles and other configurations
including: the SOT-23 case with type des-
ignation BZX84 series, the dual zener diode com-
mon anode configuration in the SOT-23 case with
type designation AZ23 series and the dual zener
diode common cathode configuration in the SOT-
23 case with type designation DZ23 series.
international E 24 standard.
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Test condition
Test condition
2
pad areas
2
pad areas
e3
Symbol
Symbol
R
P
P
T
T
thJA
tot
tot
S
J
BZT52-V-Series
- 65 to + 150
Vishay Semiconductors
Value
Value
500
410
300
150
2)
1)
1)
www.vishay.com
°C/W
Unit
mW
mW
Unit
°C
°C
1

Related parts for BZT52C6V2 SB00014/D4.

BZT52C6V2 SB00014/D4. Summary of contents

Page 1

... Valid provided that electrodes are kept at ambient temperature Document Number 85760 Rev. 1.5, 21-Apr-05 e3 Test condition Symbol P tot P tot 2 pad areas 2 pad areas Test condition Symbol R thJA BZT52-V-Series Vishay Semiconductors Value Unit 2) mW 500 mW 1) 410 Value Unit 1) °C/W 300 150 ° 150 °C www.vishay.com 1 ...

Page 2

... BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Zener Voltage Code Range ZT1 V min BZT52C2V4-V W1 2.2 BZT52C2V7-V W2 2.5 BZT52C3V0-V W3 2.8 BZT52C3V3-V W4 3.1 BZT52C3V6-V W5 3.4 BZT52C3V9-V W6 3.7 BZT52C4V3 BZT52C4V7-V W8 4.4 BZT52C5V1-V W9 4.8 BZT52C5V6-V WA 5.2 BZT52C6V2-V WB 5.8 BZT52C6V8-V WC 6.4 BZT52C7V5 BZT52C8V2-V WE 7.7 BZT52C9V1-V WF 8.5 BZT52C10-V WG 9.4 BZT52C11-V WH 10.4 BZT52C12-V WI 11.4 BZT52C13-V WK 12.4 BZT52C15-V WL 13.8 BZT52C16-V WM 15.3 BZT52C18-V WN 16.8 BZT52C20-V WO 18.8 BZT52C22 ...

Page 3

... BZT52-V-Series Vishay Semiconductors Test Temp. Reverse Admissible Zener Coefficient Voltage Current ZT1 ZT1 amb 100 nA, 45 ° ...

Page 4

... BZT52-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward characteristics 18888 Figure 2. Admissible Power Dissipation vs. Ambient Temperature ° C Figure 3. Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 4 Figure 4. Dynamic Resistance vs. Zener Current Figure 5. Capacitance vs. Zener Voltage Figure 6. Dynamic Resistance vs. Zener Current Document Number 85760 Rev ...

Page 5

... Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors °C Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C Figure 12. Temperature Dependence of Zener Voltage vs. Zener ...

Page 6

... BZT52-V-Series Vishay Semiconductors Figure 13. Change of Zener Voltage vs. Junction Temperature Figure 14. Change of Zener voltage from turn- the point of thermal equilibrium vs. Zener voltage Figure 15. Change of Zener voltage from turn- the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85760 Rev. 1.5, 21-Apr-05 ...

Page 7

... Document Number 85760 Rev. 1.5, 21-Apr-05 Figure 16. Breakdown Characteristics Figure 17. Breakdown Characteristics BZT52-V-Series Vishay Semiconductors www.vishay.com 7 ...

Page 8

... BZT52-V-Series Vishay Semiconductors Package Dimensions in mm (Inches) 0.1 (0.004) max. 0.55 (0.022) Cathode Band 1.70 (0.067) 1.40 (0.055) www.vishay.com 8 Figure 18. Breakdown Characteristics 1.35 (0.053) max. 0.25 (0.010) min. Mounting Pad Layout 1.40 (0.055) 0.72 (0.028) 0.15 (0.006) max. ISO Method E 17432 Document Number 85760 Rev. 1.5, 21-Apr-05 ...

Page 9

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Related keywords