CM100E3U-12E Mitsubishi, CM100E3U-12E Datasheet

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CM100E3U-12E

Manufacturer Part Number
CM100E3U-12E
Description
cm100e3u-12e...
Manufacturer
Mitsubishi
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM100E3U-12E
Manufacturer:
MIT
Quantity:
20 000
Outline Drawing and Circuit Diagram
Dimensions
C2E1
G
A
B
C
D
E
H
F
J
L
C
R
3-M5 Nuts
D
3.15±0.01
Inches
T
3.7
1.89
0.94
0.28
0.67
0.91
0.91
0.43
0.16
C
E
Measured
F
C2E1
Point
O
P
G
Millimeters
80.0±0.25
94.0
48.0
24.0
17.0
23.0
23.0
11.0
E2
E2
7.0
4.0
Q
A
B
O
H
C1
M
P
N
Dimensions
M
N
O
Q
R
U
P
S
T
V
J
L
TAB#110 t=0.5
S
T
2 - Mounting
Holes
(6.5 Dia.)
1.18 +0.04/-0.02 30.0 +1.0/-0.5
http://store.iiic.cc/
Inches
E2
G2
C1
0.47
0.53
0.1
0.63
0.98
0.3
0.83
0.16
0.51
V
Millimeters
12.0
13.5
16.0
25.0
21.2
13.0
U
2.5
7.5
4.0
CM100E3U-12H
HIGH POWER SWITCHING USE
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management
Features:
Application:
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100E3U-12H is a
600V (V
Module.
MITSUBISHI IGBT MODULES
Type
CM
Low Drive Power
Low V
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Brake
CES
Current Rating
CE(sat)
Amperes
), 100 Ampere IGBT
100
INSULATED TYPE
.
Volts (x 50)
V
CES
12
Sep.1998

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CM100E3U-12E Summary of contents

Page 1

... Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Application: Brake Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100E3U-12H is a 600V (V ), 100 Ampere IGBT CES Module. Current Rating V CES Type Amperes ...

Page 2

... 100A, Clamp Diode Part /dt = -200A http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100E3U-12H -40 to 150 -40 to 125 600 ±20 100 200* 100 200* 400 2.5~3.5 3.5~4.5 310 2500 rating. j(max) Min. Typ. Max. ...

Page 3

... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL 25° 1.0 1.4 1.8 2.2 2.6 EMITTER-COLLECTOR VOLTAGE (VOLTS) EC http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Min. Typ. Max. – – 0.31 – – 0.7 – – 0.7 – 0.035 – COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 ...

Page 4

... Single Pulse Per Unit Base = R = 0.7 C/W th(j- TIME, (s) http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE 100A 200V 300V ...

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