BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 7

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BUK7608-40B /T3

Manufacturer Part Number
BUK7608-40B /T3
Description
Semiconductors and Actives, mosfet
Manufacturer
Philips
Datasheet
Philips Semiconductors
9397 750 11234
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(m )
I D
(A)
300
200
100
j
j
= 25 C; t
16
12
= 25 C
8
4
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
20
14
12
10
6
p
= 300 s
2
6.5
100
7
4
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
8
6
200
Label is V GS (V)
Label is V GS (V)
I D (A)
8
V DS (V)
03nm29
03nm30
10
20
300
10
Rev. 01 — 08 April 2003
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
(m )
T
a
j
a
1.5
0.5
= 25 C; I
14
12
10
=
2
1
0
8
6
4
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
5
DSon 25 C
R
DSon
D
= 25 A
0
BUK75/7608-40B
TrenchMOS™ standard level FET
10
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
60
15
120
V GS (V)
T j ( C)
03nm28
03aa27
180
20
7 of 15

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