FLU17ZMTE1 Sumitomo Electric, FLU17ZMTE1 Datasheet - Page 5

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FLU17ZMTE1

Manufacturer Part Number
FLU17ZMTE1
Description
GaAs FET designed for base station and CPEapplication up to a 4.0GHz frequency range
Manufacturer
Sumitomo Electric
Datasheet
Edition 1.1
Apr. 2012
IM 3@ 1.8GHz
IM 5@ 2.0GHz
-10
-20
-30
-40
-50
-60
-70
-80
0
IMD vs OUTPUT POWER(2-tone)
15
-25
-30
-35
-40
-45
-50
-55
-60
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
W-CDMA SINGLE CARRIER ACLR
2-tone total Pout [dBm ] @ df=+5M Hz
20 21 22 23 24 25 26 27 28 29 30
20
-5M Hz
-10M Hz
*fo =2.1325GHz
Ou tp u t Po w e r [d Bm ]
IM 5@ 1.8GHz
IM 3L dBc
25
30
+5M Hz
+10M Hz
IM 3@ 2.0GHz
IM 5L dBc
@ VDS=10V IDS(DC)=0.6IDSS
35
5
L-Band Medium & High Power GaAs FET
W-CDMA SINGLE CARRIER CCDF AND GAIN
-25
-30
-35
-40
-45
-50
-55
-60
15
14
13
12
11
10
9
8
7
6
5
IM 3-L
18
W-CDMA 2-CARRIER IMD(ACLR)
18 19 20 21 22 23 24 25 26 27 28
*fo=2.1325GHz *f1=2.1475GHz
2-tone total Pout [dBm ]
IM 3-U
0.01%
Ou tp u t Po w e r [d Bm ]
*fo =2.1325GHz
FLU17ZME1
23
IM 5-L
Pe ak
IM 5-U
Gain
28

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