BYQ28E-200-E3 Vishay, BYQ28E-200-E3 Datasheet - Page 2

• Manufacturer Part Number: BYQ28E-200-E3
• Description: Semiconductors and Actives, Power Diodes, Discretes (diodes, transistors, thyristors ...), Diodes
• Manufacturer: Vishay

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT
Vishay General Semiconductor
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at
working peak reverse voltage
Maximum reverse recovery time per diode
Maximum reverse recovery time per diode
Maximum stored charge per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
A
= 25 °C unless otherwise noted)
15
10
5
0
0
(1)
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
BYQ28E-200-E3/45
BYQ28EF-200-E3/45
BYQ28EB-200-E3/45
BYQ28EB-200-E3/81
Case Temperature (°C)
50
PREFERRED P/N
100
- junction to ambient
- junction to case
at I
at I
at I
T
T
at I
at I
I
F
j
j
= 2 A, di/dt = 20 A/µs, V
= 25 °C
= 100 °C
F
F
F
F
F
= 10 A, T
= 5 A, T
= 5 A, T
= 1.0 A, di/dt = 100 A/µs, V
= 0.5 A, I
C
UNIT WEIGHT (g)
= 25 °C unless otherwise noted)
150
C
= 25 °C unless otherwise noted)
1.80
1.95
1.77
1.77
R
j
j
j
= 25 °C
= 25 °C
= 150 °C
= 1.0 A, I
TEST CONDITIONS
SYMBOL
R
R
θJC
θJA
rr
R
= 0.25 A
= 30 V, I
PACKAGE CODE
R
Figure 2. Maximum Non-Repetitive Peak Forward Surge
= 30 V, I
100
BYQ28E
10
rr
UG10
1
= 0.1 I
4.5
45
45
45
81
1
50
rr
= 0.1 I
RM
RM
Number of Cycles at 60 Hz
BYQ28EF
Current Per Diode
BASE QUANTITY
UGF10
6.7
55
SYMBOL
800/Reel
50/Tube
50/Tube
50/Tube
T
8.3 ms Single Half Sine-Wave
C
Q
V
I
= 105 °C
t
t
10
R
rr
rr
F
rr
BYQ28EB
UGB10
Document Number 88549
4.8
VALUE
50
0.895
1.25
1.10
200
10
25
20
DELIVERY MODE
9
Tape Reel
Tube
Tube
Tube
100
22-Aug-06
UNIT
°C/W
UNIT
µA
nC
ns
ns
V