K6X1008T2D-PF70T00 Samsung, K6X1008T2D-PF70T00 Datasheet - Page 2

• Manufacturer Part Number: K6X1008T2D-PF70T00
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos, voltage
• Manufacturer: Samsung

VSS
I/O1
I/O2
I/O3
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
K6X1008T2D Family
PRODUCT FAMILY
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
128Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 128K x 8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state outputs
• Package Type: 32-SOP-525, 32-TSOP1-0820F
K6X1008T2D-B
K6X1008T2D-F
K6X1008T2D-Q Automotive(-40~125°C)
Product Family Operating Temperature Vcc Range
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
32-SOP
I/O
CS
A
Name
0
WE
Vcc
Vss
OE
1
NC
1
~A
~I/O
,CS
16
2
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-SOP-525, 32-TSOP1-0820F
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Commercial(0~70°C)
Industrial(-40~85°C)
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
No Connection
VCC
CS2
A11
A13
A15
A14
A12
A16
WE
NC
A9
A7
A6
A5
A4
A8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Type1-Forward
Function
32-TSOP
2.7~3.6V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
55
70
1)
Speed
/70
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
2)
/85ns
2
2)
/85ns
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6X1008T2D families are fabricated by SAMSUNG′s
CS
CS
WE
OE
(I
1
2
Row
Addresses
Standby
SB1
Power Dissipation
I/O
I/O
25µA
6µA
1
8
Control
logic
, Max)
Operating
(I
CC2,
20mA
Clk gen.
Max)
Data
cont
Data
cont
Row
select
CMOS SRAM
32-TSOP1-0820F
Column Addresses
Precharge circuit.
32-SOP-525
Memory array
PKG Type
Column select
I/O Circuit
Revision 2.0
March 2005