SST30VR023-500-C-WH Silicon Storage Tech, SST30VR023-500-C-WH Datasheet - Page 6

no-image

SST30VR023-500-C-WH

Manufacturer Part Number
SST30VR023-500-C-WH
Description
Manufacturer
Silicon Storage Tech
Datasheet
Data Sheet
AC CHARACTERISTICS
I. ROM Operation
TABLE 5: R
©2003 Silicon Storage Technology, Inc.
Symbol
T
T
T
T
T
T
T
T
T
AA
RC
CO
OE
LZ
OLZ
HZ
OHZ
OH
FIGURE 4: ROM R
FIGURE 5: ROM R
Data Out
Address
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
EAD
ROMCS#
Data Out
Address
C
OE#
YCLE
Notes: 1. T
EAD
EAD
2 Mbit ROM + 1 Mbit / 2 Mbit / 256 Kbit SRAM ROM/RAM Combo
T
2. At any given temperature and voltage condition T
IMING
C
C
and are referenced to the V
device and from device to device.
YCLE
YCLE
HZ
and T
Previous Data Valid
P
ARAMETERS
T
T
High-Z
OHZ
IMING
IMING
are defined as the time at which the outputs achieve the open circuit condition
D
D
IAGRAM
IAGRAM
T LZ(2)
V
OH
DD
T OH
http://store.iiic.cc/
T OLZ
T AA
or V
T CO
= 2.7-3.3V
(A
(ROMCS# & OE# C
T OE
OL.
SST30VR022-70
DDRESS
Min
SST30VR021 / SST30VR022 / SST30VR023
70
10
0
0
6
T RC
T AA
HZ
T RC
C
(max) is less than T
ONTROLLED
Max
70
70
35
25
25
Data Valid
ONTROLLED
SST30VR021/022/023-500
) (ROMCS# = OE# = V
LZ
(min) both for a given
Min
500
25
25
15
T OHZ(1)
T HZ(1,2)
)
Data Valid
T OH
1135 F03.0
Max
500
500
250
30
30
1135 F02.0
S71135-05-000
IL
)
Units
T5.2 1135
ns
ns
ns
ns
ns
ns
ns
ns
ns
12/03

Related parts for SST30VR023-500-C-WH