55GN01CA-TB-E ON Semiconductor
55GN01CA-TB-E
Manufacturer Part Number
55GN01CA-TB-E
Description
Transistors RF Bipolar Power SWITCHING DEVICE
Manufacturer
ON Semiconductor
Specifications of 55GN01CA-TB-E
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
5.5 GHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
5 mA
Maximum Dc Collector Current
70 mA
Power Dissipation
200 mW
Package / Case
CP
Gain Bandwidth Product Ft
4.5 GHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
+ 25 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
55GN01CA-TB-E
Manufacturer:
ON/安森美
Quantity:
20 000