SiT8002AC-23-25E-10.00000 SiTime, SiT8002AC-23-25E-10.00000 Datasheet
SiT8002AC-23-25E-10.00000
Specifications of SiT8002AC-23-25E-10.00000
Related parts for SiT8002AC-23-25E-10.00000
SiT8002AC-23-25E-10.00000 Summary of contents
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... Connect to Ground 3 OUT 1 to 125 MHz Programmed Clock output 4 VDD Connect to 1.8V or 2.5V or 3.3V SiTime Corporation 990 Almanor Avenue, Suite 200 Rev. 1.04 • High drive option: 30pF load (contact factory) Benefits • No crystal or capacitors required • Eliminates crystal qualification time • 50% + board saving space • ...
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... MEMS oscillators are inherently more reliable, have more consistent performance and are always in stock. The SiT8002, by eliminating the quartz crystals, has improved immunity to the environmental effects of vibration, shock, strain, and humidity. To order samples www.sitime.com and click on Request Sample” link. Min. -65 -0.5 – ...
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SiT8002 DC Electrical Specifications @VDD = 3.3V ±10%, -40 to 85°C Parameter Condition Output Voltage High IOH = -9 mA Output Voltage Low IOL = 9 mA Input Voltage High Pin 1 Input Voltage Low Pin 1 Operating Current Output ...
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SiT8002 AC Electrical Specifications @VDD = 3.3V ±10%, -40 to 85°C Parameter Condition Clock Output Frequency [3] Frequency Tolerance Inclusive of initial tolerance, operating temper- ature, rated power supply voltage change, load change,aging, shock and vibration Aging First year Clock ...
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SiT8002 Ordering Information S iT8002A 33E - 123.12345 T S iT8002A 33E - 123.12345 T P art Fam ily P art Fam ily “Si T8002” “Si T8002” Rev ision Letter Rev ision ...
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SiT8002 Package Information [4] (continued) Dimension (mm) 3.2 x 2.5 x 0.85mm 3.2±0.15 5.0 x 3.2 x 0.85mm 5.0±0.15 7.0 x 5.0 x 0.85mm Do not Connect the center pad 0.85±0.15 Connect it to Device’s GND Note: 4. xxxx top ...
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... SiTime Corporation 2008. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress ...