LCMXO2280E-5BN256C Lattice, LCMXO2280E-5BN256C Datasheet - Page 13

• Manufacturer Part Number: LCMXO2280E-5BN256C
• Description: CPLD - Complex Programmable Logic Devices 2280 LUTs 211 I/O 1.2V -5 SPD
• Manufacturer: Lattice

Specifications of LCMXO2280E-5BN256C

• Rohs: yes
• Memory Type: SRAM
• Number Of Macrocells: 1140
• Delay Time: 3.6 ns
• Number Of Programmable I/os: 211
• Operating Supply Voltage: 1.2 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: 0 C
• Package / Case: CABGA
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 595
• Supply Current: 20 mA
• Supply Voltage - Max: 1.26 V
• Supply Voltage - Min: 1.14 V

3.3 MachXO2 Product Family Flash Endurance Cycling Data
Flash Extended Endurance testing measures the durability of the device through programming and erase
cycles. Endurance testing consists of repeatedly programming and erasing all cells in the array at 25°C ambient
to simulate programming cycles the user would perform. This test evaluates the integrity of the thin tunnel oxide
through which current passes to program the floating gate in each cell of the array.
MachXO2 Flash Extended Endurance Test Conditions:
Stress Duration: 1K, 10K, 20K, 50K, 100K Cycles
Temperature: 25°C ambient
Stress Voltage MachXO2: V
Method: Lattice Document # 70-104633 and JESD22-A117A
Table 3.3.1: MachXO2 Flash Extended Endurance Results
INDEX Return
LCMXO2-1200ZE
LCMXO2-7000ZE
LCMXO2-7000ZE
LCMXO2-2000ZE
LCMXO2-4000ZE
LCMXO2-256ZE
LCMXO2-256ZE
LCMXO2-640ZE
Product Name
Lot #6
Lot #1
Lot #2
Lot #1
Lot #2
Lot #1
Lot #1
Lot #1
Lot #
CC
=1.26V / V
Qty
54
60
60
30
30
30
30
30
CCIO
Cycling
Temp
25C
25C
25C
25C
25C
25C
25C
25C
=3.47V
13
CYC
1K
0
0
0
0
0
0
0
0
CYC
10K
0
0
0
0
0
0
0
0
Lattice Semiconductor Corporation Doc. #25-106923 Rev. F
CYC
20K
0
0
0
0
0
0
0
0
CYC
50K
0
0
0
0
0
0
0
0
100K
CYC
0
0
0
0
0
0
0
0