MCF51QU32VHS Freescale Semiconductor, MCF51QU32VHS Datasheet - Page 30

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MCF51QU32VHS

Manufacturer Part Number
MCF51QU32VHS
Description
32-bit Microcontrollers - MCU COLDFIREV1 32kFLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MCF51QU32VHS

Rohs
yes
Core
ColdFire V1
Processor Series
MCF51QU128
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
1.71 V to 3.6 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
QFN-44
Mounting Style
SMD/SMT
Memories and memory interfaces
6.4.1.4 Reliability specifications
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
30
n
n
t
n
n
n
t
t
t
t
t
nvmretee100
t
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmretee1
nvmwree4k
nvmwree8k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
javg
Table 20. NVM reliability specifications
= 55°C (temperature profile over the lifetime of the application).
MCF51QU128 Data Sheet, Rev. 4, 01/2012.
FlexRAM as EEPROM
Program Flash
Data Flash
1.27 M
315 K
10 M
20 M
10 K
10 K
35 K
Min.
10
15
10
15
10
15
5
5
5
100 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
35 K
35 K
100
100
100
100
100
100
≤ 125°C.
50
50
50
1
Max.
Freescale Semiconductor, Inc.
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
years
years
years
Unit
Notes
2
2
2
3
2
2
2
3
2
2
2
4

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