M95160-RMC6TG STMicroelectronics, M95160-RMC6TG Datasheet - Page 29

• Manufacturer Part Number: M95160-RMC6TG
• Description: EEPROM 16kB Serial BUS EE 1.8V to 5.5V ESD
• Manufacturer: STMicroelectronics

Specifications of M95160-RMC6TG

• Product Category: EEPROM
• Rohs: yes

M95160 M95160-W M95160-R M95160-F
Table 13.
1. Sampled only, not 100% tested, at T
Table 14.
1. The data retention behavior is checked in production. The 40-year limit is defined from characterization and
Table 15.
1. For all 5 V range devices, the device meets the output requirements for both TTL and CMOS standards.
2. Characterized only, not tested in production.
Data retention
Cycling
Symbol
V
V
Symbol
V
RES
I
OH
C
qualification results.
V
I
I
V
OL
CC1
I
CC
C
LO
LI
OUT
IH
IL
IN
(1)
(1)
(2)
Input leakage current
Output leakage current
Supply current (Read)
Supply current
(Standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Internal reset threshold
voltage
Output capacitance (Q)
Input capacitance (D)
Input capacitance (other pins)
Capacitance
Memory cell data retention
DC characteristics (M95160, device grade 6)
(1)
Parameter
Parameter
Parameter
Doc ID 022580 Rev 3
A
V
S = V
C = 0.1 V
V
S = V
V
I
I
= 25 °C and a frequency of 5 MHz.
OL
OH
Test conditions in addition to
IN
CC
IN
those defined in
= 2 mA, V
= V
= V
= –2 mA, V
= 5 V, Q = open
CC
CC
SS
SS
TA = 55 °C
TA = 25 °C
, V
, V
CC
Test conditions
or V
or V
OUT
CC
/0.9 V
Table 12
Test conditions
V
CC
= 5 V,
CC
CC
V
V
OUT
= V
CC
IN
IN
= 5 V
CC
= 5 V
SS
= 0 V
= 0 V
= 0 V
Table 8
at 10 MHz,
or V
CC
(1)
and
Min.
0.7 V
0.8 V
DC and AC parameters
–0.45
1 million
Min.
2.5
Min.
40
CC
CC
Max.
8
8
6
0.3 V
V
Max.
CC
± 2
± 2
0.4
3.5
5
2
+1
CC
Cycle
Year
Unit
Unit
pF
pF
pF
Unit
mA
29/46
µA
µA
µA
V
V
V
V
V