AT25DL081-SSHN-B Adesto Technologies, AT25DL081-SSHN-B Datasheet - Page 45

• Manufacturer Part Number: AT25DL081-SSHN-B
• Description: Flash 8M 1.65-1.95V 100Mhz Serial Flash
• Manufacturer: Adesto Technologies

Specifications of AT25DL081-SSHN-B

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: Flash
• Memory Size: 8 Mbit
• Architecture: Flexible, Uniform Erase
• Timing Type: Synchronous
• Interface Type: SPI
• Supply Voltage - Max: 1.95 V
• Supply Voltage - Min: 1.65 V
• Maximum Operating Current: 20 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8

12.4
Resume from Deep Power-Down
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-Down
command must be issued. The Resume from Deep Power-Down command is the only command that the device will
recognize while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first be asserted and then the opcode ABh must be
clocked into the device. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is
deasserted, the device will exit the Deep Power-Down mode and return to the standby mode within the maximum time of
t
resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an even
byte boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down
mode.
Figure 12-4. Resume from Deep Power-Down
RDPD
SCK
CS
SO
I
. After the device has returned to the standby mode, normal command operations such as Read Array can be
CC
SI
Deep Power-Down Mode Current
MSB
High-impedance
1
0
Active Current
0
1
1
2
Opcode
0
3
1
4
0
5
1
6
1
7
Standby Mode Current
t
RDPD
AT25DL081 [DATASHEET]
8732E–DFLASH–1/2013
45