MC100EPT25DR2G ON Semiconductor, MC100EPT25DR2G Datasheet - Page 3

• Manufacturer Part Number: MC100EPT25DR2G
• Description: IC XLATOR LVECL/ECL-LVTTL 8-SOIC
• Manufacturer: ON Semiconductor
• Series: 100EPTr

Specifications of MC100EPT25DR2G

• Logic Function: Translator
• Number Of Bits: 1
• Input Type: ECL
• Output Type: LVTTL
• Number Of Channels: 1
• Number Of Outputs/channel: 1
• Differential - Input:output: Yes/No
• Propagation Delay (max): 1.6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage: 3 V ~ 3.6 V
• Logic Family: ECL
• Logical Function: Translator
• Technology: ECL
• High Level Output Current: -3mA
• Low Level Output Current: 24mA
• Package Type: SOIC N
• Abs. Propagation Delay Time: 1.6ns
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Rate: -
• Lead Free Status / Rohs Status: Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Input parameters vary 1:1 with GND.
4. V
Table 3. MAXIMUM RATINGS
Table 4. NECL DC CHARACTERISTICS
Symbol
V
V
V
I
T
T
q
q
q
q
q
T
q
IEE
V
V
V
V
I
I
Symbol
BB
IH
IL
A
stg
JA
JC
JA
JC
JA
sol
JC
CC
EE
IN
IH
IL
BB
IHCMR
input signal.
IHCMR
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Input HIGH Voltage Single−Ended
Input LOW Voltage Single−Ended
Output Voltage Reference
Input HIGH Voltage Common Mode
Range (Note 4)
Input HIGH Current
Input LOW Current
Positive Power Supply
Negative Power Supply
Input Voltage
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Thermal Resistance (Junction−to−Case)
BB
Sink/Source
Characteristic
Parameter
EE
, V
IHCMR
max varies 1:1 with V
V
CC
Pb−Free
= 3.3 V; V
−1225
−1945
−1525
Min
8.0
0.5
Pb
V
EE
http://onsemi.com
GND = 0 V
GND = 0 V
GND = 0 V
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
(Note 2)
+ 2.0
−40°C
−1425
EE
CC
Typ
16
Condition 1
= −5.5 V to −3.0 V; GND = 0.0 V (Note 3)
. The V
3
−1625
−1325
−880
Max
150
0.0
IHCMR
25
range is referenced to the most positive side of the differential
−1225
−1945
−1525
Min
8.0
0.5
V
EE
V
V
8 SOIC
8 SOIC
8 SOIC
8 TSSOP
8 TSSOP
8 TSSOP
DFN8
DFN8
DFN8
+ 2.0
EE
CC
−1425
25°C
Typ
Condition 2
= −5.0 V
16
= +3.3 V
−1625
−1325
−880
Max
150
0.0
25
−1225
−1945
−1525
Min
8.0
0.5
V
EE
−65 to +150
−40 to +85
+ 2.0
0 to V
41 to 44
41 to 44
35 to 40
Rating
−1425
85°C
± 0.5
Typ
190
130
185
140
129
265
265
3.8
16
−6
84
EE
−1625
−1325
−880
Max
150
0.0
25
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
°C
°C
°C
V
V
V
Unit
mA
mV
mV
mV
mA
mA
V