MAX3969E/D Maxim Integrated, MAX3969E/D Datasheet - Page 8

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MAX3969E/D

Manufacturer Part Number
MAX3969E/D
Description
Limiting Amplifiers
Manufacturer
Maxim Integrated
Datasheet

Specifications of MAX3969E/D

Operating Supply Voltage
3 V, 5 V
Supply Current
22 mA
Operating Temperature Range
+ 85 C
Number Of Channels
1
Power Dissipation
1099 mW
For high-current density and reliable operation, the
MAX3969 uses gold metalization. For best results, use
gold-wire ball-bonding techniques. Use caution if
attempting wedge bonding. Die pad size is 4 mils x 4
mils. Die thickness is 16 mils.
Table 1 lists the bond pad coordinates for the MAX3969.
The origin for pad coordinates is defined as the bottom
left corner of the bottom left pad. All pad locations are
referenced from the origin and indicate the center of the
pad where the bond wire should be connected. Refer to
Maxim Application Note HFAN-08.0.1: Understanding
Bonding-Coordinates and Physical Die Size for detailed
information.
200Mbps SFP Limiting Amplifier
8
_______________________________________________________________________________________
TOP VIEW
CONNECT EXPOSED PAD (EP) TO CIRCUIT BOARD GROUND.
FILTER
RSSI
INV
IN+
IN-
Applications Information
1
2
3
4
5
6
THIN QFN
19
7
MAX3969
Pin Configuration
18
8
17
9
16
10
Wire Bonding
15
14
13
12
11
LOS
SD
OUT-
OUT+
V
CCO
Table 1. Bond Pad Coordinates
TRANSISTOR COUNT: 915
SUBSTRATE CONNECTED TO GND
PROCESS: Silicon Bipolar
DIE THICKNESS: 16 mils
PAD
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
SQUELCH
FILTER
NAME
OUT+
V
OUT-
RSSI
GND
GND
GND
CZN
CZP
LOS
LOS
V
V
V
INV
IN+
IN-
CCO
SD
CC
CC
TH
Chip Information
1204.9
1204.9
1204.9
1204.9
1204.9
1053.7
195.1
432.7
589.3
743.2
945.7
808.0
586.6
432.7
195.1
46.6
46.6
46.6
46.6
46.6
COORDINATES (μm)
X
659.5
505.6
351.7
197.8
262.6
492.1
697.3
818.8
818.8
818.8
818.8
818.8
-99.1
-99.1
-99.1
-99.1
-99.1
-96.4
46.6
81.7
Y

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