MR25H40MDFR Everspin Technologies, MR25H40MDFR Datasheet - Page 10

• Manufacturer Part Number: MR25H40MDFR
• Description: NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM
• Manufacturer: Everspin Technologies

Specifications of MR25H40MDFR

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Size: 4 MB
• Organization: 512 K x 8
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Operating Current: 20 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: DFN-8
• Maximum Power Dissipation: 0.6 W
• Operating Temperature Range: - 40 C to + 85 C
• Operating Voltage: 3 V to 3.6 V

Everspin Technologies © 2011
3. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to avoid
application of any magnetic field more intense than the field intensity specified in the maximum ratings.
1
2
3
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
All voltages are referenced to V
Power dissipation capability depends on package characteristics and use environment.
Parameter
Supply voltage
Voltage on any pin
Output current per pin
Package power dissipation
Temperature under bias
Temperature under bias
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
Maximum magnetic field during read or standby
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
than 0.5V. The AC value of V
to less than 20mA.
MR25H40C (Industrial)
MR25H40M (AEC-Q100 Grade 1)
2
2
3
IN
Table 3.1 Absolute Maximum Ratings
must not exceed applied V
SS
. The DC value of V
10
IN
must not exceed actual applied V
Symbol
V
V
I
P
T
T
T
T
H
H
OUT
stg
BIAS
BIAS
Lead
DD
IN
D
max_write
max_read
DD
by more than 2V for 10ns with I
Value
-0.5 to 4.0
-0.5 to V
±20
0.600
-45 to 95
-45 to 135
-55 to 150
260
12,000
12,000
1
DD
+ 0.5
MR25H40 Rev. 5, 11/2011
MR25H40
DD
by more
Unit
V
V
mA
W
°C
°C
°C
°C
A/m
A/m
IN
limited