NCP335FCT2G ON Semiconductor, NCP335FCT2G Datasheet - Page 8

• Manufacturer Part Number: NCP335FCT2G
• Description: Power Switch ICs - Power Distribution
• Manufacturer: ON Semiconductor

Power Dissipation
power dissipation of the power MOSFET. Assuming this,
the power dissipation and the junction temperature in
normal mode can be calculated with the following
equations:
P
P
R
I
OUT
D
D
DS(on)
Main contributor in term of junction temperature is the
= R
DS(on)
x (I
OUT
= Power dissipation (W)
= Power MOSFET on resistance (W)
= Output current (A)
T
J
= P
)
2
D
x R
qJA
Figure 13. Routing Example 1 oz, 2 Layers, 1005C/W
+ T
A
APPLICATION INFORMATION
http://onsemi.com
8
T
R
T
PCB Recommendations
PMOS FET, and the PCB design rules must be respected to
properly evacuate the heat out of the silicon. By increasing
PCB area, especially around IN and OUT pins, the R
the package can be decreased, allowing higher power
dissipation.
A
J
qJA
The NCP334 – NCP335 integrate an up to 2 A rated
= Junction temperature (°C
= Package thermal resistance (°C/W)
= Ambient temperature (°C)
qJA
of