M95160-RMB6TG STMicroelectronics, M95160-RMB6TG Datasheet - Page 10

IC EEPROM 16KBIT 5MHZ 8UFDFPN

M95160-RMB6TG

Manufacturer Part Number
M95160-RMB6TG
Description
IC EEPROM 16KBIT 5MHZ 8UFDFPN
Manufacturer
STMicroelectronics
Datasheet

Specifications of M95160-RMB6TG

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
16K (2K x 8)
Speed
5MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-MLP, 8-UFDFPN
Organization
2 K x 8
Interface Type
SPI
Maximum Clock Frequency
10 MHz
Access Time
80 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
3 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Memory Configuration
2048 X 8
Clock Frequency
5MHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
DFN
No. Of Pins
8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8712-2
M95160-RMB6TG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M95160-RMB6TG
Manufacturer:
STMicroelectronics
Quantity:
45 330
Part Number:
M95160-RMB6TG
Manufacturer:
ST
Quantity:
20 000
Connecting to the SPI bus
3
10/50
Connecting to the SPI bus
These devices are fully compatible with the SPI protocol.
All instructions, addresses and input data bytes are shifted in to the device, most significant
bit first. The Serial Data input (D) is sampled on the first rising edge of the Serial Clock (C)
after Chip Select (S) goes low.
All output data bytes are shifted out of the device, most significant bit first. The Serial Data
output (Q) is latched on the first falling edge of the Serial Clock (C) after the instruction (such
as the Read from Memory Array and Read Status Register instructions) have been clocked
into the device.
Figure 4.
selected at a time, so only one device drives the Serial Data output (Q) line at a time, all the
others being high impedance.
Figure 4.
1. The Write Protect (W) and Hold (HOLD) signals should be driven, high or low as appropriate.
Figure 4
Only one memory device is selected at a time, so only one memory device drives the Serial
Data output (Q) line at a time, the other memory devices are high impedance.
The pull-up resistor R (represented in
Bus Master leaves the S line in the high impedance state.
In applications where the Bus Master may be in a state where all input/output SPI buses are
high impedance at the same time (for example, if the Bus Master is reset during the
transmission of an instruction), the clock line (C) must be connected to an external pull-
down resistor so that, if all inputs/outputs become high impedance, the C line is pulled low
(while the S line is pulled high): this ensures that S and C do not become high at the same
time, and so, that the t
SPI Interface with
(CPOL, CPHA) =
CS3
(0, 0) or (1, 1)
SPI Bus Master
CS2 CS1
shows an example of three memory devices connected to an MCU, on an SPI bus.
shows three devices, connected to an MCU, on an SPI bus. Only one device is
Bus master and memory devices on the SPI bus
SDO
SDI
SCK
R
SHCH
R
requirement is met. The typical value of R is 100 k.
C Q D
S
Doc ID 8028 Rev 10
SPI Memory
Device
W
Figure
V
CC
HOLD
V
R
4) ensures that a device is not selected if the
SS
C Q D
S
SPI Memory
Device
W
V
HOLD
CC
V
R
SS
M95160-x, M95080-x
C Q D
S
SPI Memory
Device
W
V
CC
HOLD
AI12836b
V
SS
V
V
CC
SS

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