M29W400DT70ZE6E NUMONYX, M29W400DT70ZE6E Datasheet - Page 32
![no-image](/images/manufacturer_photos/0/4/484/numonyx_sml.jpg)
M29W400DT70ZE6E
Manufacturer Part Number
M29W400DT70ZE6E
Description
IC FLASH 4MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W400DT70ZE6E.pdf
(48 pages)
Specifications of M29W400DT70ZE6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8 or 256K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W400DT70ZE6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 12. Write AC waveforms, Write Enable controlled
Table 13.
1. Sampled only, not 100% tested.
32/48
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
DVWH
WHDX
WHEH
WHWL
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
(1)
A0-A17/
A–1
E
G
W
DQ0-DQ7/
DQ8-DQ15
V CC
RB
Write AC characteristics, Write Enable controlled
t
t
t
BUSY
t
t
WPH
t
OEH
Alt
t
t
t
t
t
t
VCS
WC
WP
CS
DS
DH
CH
AH
AS
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
tVCHEL
High to Chip Enable Low
tELWL
tGHWL
tAVWL
Parameter
tAVAV
VALID
tWLWH
tDVWH
tWHRL
VALID
tWLAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tWHEH
tWHGL
tWHWL
tWHDX
45
45
30
25
30
40
30
50
0
0
0
0
0
0
M29W400D
55
55
30
30
30
45
30
50
0
0
0
0
0
0
AI01869C
70
70
30
45
30
45
35
50
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs