CY62256VNLL-70ZXI Cypress Semiconductor Corp, CY62256VNLL-70ZXI Datasheet - Page 5

• Manufacturer Part Number: CY62256VNLL-70ZXI
• Description: IC SRAM 256KBIT 70NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62256VNLL-70ZXI

• Memory Size: 256K (32K x 8)
• Package / Case: 28-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Density: 256Kb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 15b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Supply Current: 30mA
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Configuration: 32K X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 28
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2085; CY62256VNLL-70ZXI

Capacitance
Thermal Resistance
Data Retention Characteristics
Over the Operating Range
Document Number: 001-06512 Rev. *E
C
C
Parameter
V
I
t
t
Notes
CCDR
CDR
R
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
Parameter
IN
OUT
DR
Parameter
[5]
[6]
θ
θ
JA
JC
[5]
[5]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
OUTPUT
Parameter
Input capacitance
Output capacitance
CC
V
INCLUDING
RTH
VTH
for data retention
R1
R2
CC
CC
JIG AND
Description
SCOPE
Description
+ 0.3 V.
50 pF
Description
R1
Equivalent to:
R2
Figure 1. AC Test Loads and Waveforms
V
CE ≥ V
V
or V
CC
IN
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
T
≥ V
IN
A
= 1.4 V,
= 25 °C, f = 1 MHz, V
≤ 0.3 V
CC
CC
OUTPUT
– 0.3 V,
– 0.3 V
Test Conditions
Conditions
Test Conditions
THÉ VENIN EQUIVALENT
GND
V
Value
1.750
1100
1500
645
CC
≤
R
5 ns
th
CC
[6]
10%
= 3.0 V
Commercial
Industrial/
Automotive-A
Automotive-E
ALL INPUT PULSES
90%
V
th
SOIC
68.45
26.94
Min
CC
1.4
70
–
–
–
0
= V
CC
Max
6
8
90%
Typ, T
TSOPI
87.62
23.73
10%
Typ
0.1
–
–
–
≤
A
[7]
= 25 °C, and t
5 ns
Ohms
Ohms
Ohms
Units
Volts
RTSOPI
CY62256VN
87.62
23.73
Max
50
–
3
6
–
–
AA
Page 5 of 15
Unit
= 70 ns.
pF
pF
Unit
°C/W
°C/W
μA
ns
ns
Unit
V