CY7C1021BNL-15ZXI Cypress Semiconductor Corp, CY7C1021BNL-15ZXI Datasheet
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CY7C1021BNL-15ZXI
Specifications of CY7C1021BNL-15ZXI
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CY7C1021BNL-15ZXI Summary of contents
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... Note 1. For best practice recommendations, refer to the Cypress application note, Cypress Semiconductor Corporation Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN 1 Mbit (64K x 16) Static RAM Functional Description The CY7C1021BN/CY7C10211BN CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected ...
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Contents Features ................................................................................1 Functional Description ........................................................1 Logic Block Diagram ...........................................................1 Contents ...............................................................................2 Selection Guide ...................................................................3 Pin Configuration ................................................................3 Pin Definitions ................................................................3 Maximum Ratings ................................................................4 Operating Range ..................................................................4 Electrical Characteristics ....................................................4 Capacitance .........................................................................5 Thermal Resistance .............................................................5 Document #: 001-06494 Rev. *C ...
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Selection Guide Description Maximum access time (ns) Maximum operating current (mA) Maximum CMOS standby current (mA) Commercial/Industrial Pin Configuration Pin Definitions Pin Name Pin Number A –A 1–5,18–21, 24–27, 42– I/O –I/O 7–10, 13–16, 29–32 35–38 ...
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Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ........................................... –55 °C to +125 °C [2] ...
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Capacitance [4] Parameter Description C Input capacitance IN C Output capacitance OUT Thermal Resistance [4] Parameter Description Θ Thermal resistance JA (junction to ambient) Θ Thermal resistance JC (junction to case) R 481Ω OUTPUT OUTPUT OUTPUT OUTPUT R2 ...
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... HZWE 8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE / BLE LOW. CE, WE, and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write ...
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Switching Waveforms ADDRESS DATA OUT PREVIOUS DATA VALID Figure 4. Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE OE t DOE BHE, BLE t LZOE t DBE t LZBE HIGH IMPEDANCE DATA OUT t LZCE ...
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Figure 5. Write Cycle No. 1 (CE Controlled) ADDRESS ADDRESS BHE, BLE DATA I/O Figure 6. Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATA I/O Notes 12. Data ...
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Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS BHE, BLE DATA I/O Truth Table BLE BHE I High Data ...
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... Cypress maintains a worldwide network of offices, solution centers, manufacturers’ representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (ns) Ordering Code 12 CY7C1021BN-12ZXC 15 CY7C1021BNL-15VXC CY7C1021BN-15ZXC CY7C1021BN-15ZXI CY7C1021BNL-15ZXI CY7C1021BNL-15ZSXA CY7C1021BN-15VXE CY7C1021BN-15ZSXE Ordering Code Definition Technology: 250 nm Speed = ns ...
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Package Diagrams Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN Figure 8. 44-Pin (400-Mil) Molded SOJ Figure 9. 44-Pin TSOP II 51-85082 *C 51-85087 *C Page [+] Feedback ...
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... Table 1. Acronyms Used in this Document Acronym Description BHE Byte high enable BLE Byte low enable CE Chip enable CMOS Complementary metal oxide semiconductor I/O Input/output OE Output enable SRAM Static random access memory TSOP Thin small outline package WE Write enable Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN Page [+] Feedback ...
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... Corrected ‘Byte write select inputs’ to ‘Byte Enable select inputs’ on page 2. Ω Added ohm ( )symbol inThevenin equivalent circuit on page 4. Included T and T to Switching Characteristics table footnote 2 HZBE LZBE Included operating range for CY7C1021BNL-15ZXI in ordering information table. cypress.com/go/plc Revised June 11, 2010 CY7C1021BN, CY7C10211BN PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 ...