M27C1001-12F1 STMicroelectronics, M27C1001-12F1 Datasheet - Page 9

IC EPROM 1MBIT 120NS 32CDIP

M27C1001-12F1

Manufacturer Part Number
M27C1001-12F1
Description
IC EPROM 1MBIT 120NS 32CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C1001-12F1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
1M
Organization
128K×8
Package Type
FDIP32W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
120 ns
Time, Fall
≤20 ns
Time, Programmable
100 μs
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Max.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
128K X 8
Access Time
120ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
DIP
No. Of Pins
32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1631-5

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Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C1001. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C1001, with V
bytes may then be sequenced from the device out-
puts by toggling address line A0 from V
other address lines must be held at V
Electronic Signature mode.
Byte 0 (A0 = V
code and byte 1 (A0 = V
code. For the STMicroelectronics M27C1001,
these two identifier bytes are given in Table 4 and
can be read-out on outputs Q7 to Q0.
IL
) represents the manufacturer
PP
= V
CC
IH
) the device identifier
= 5V. Two identifier
IL
to V
IL
during
IH
. All
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C1001 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 Å range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C1001 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C1001 is to be exposed to
these types of lighting conditions for extended pe-
riods of time, it is suggested that opaque labels be
put over the M27C1001 window to prevent unin-
tentional erasure. The recommended erasure pro-
cedure for the M27C1001 is exposure to short
wave ultraviolet light which has a wavelength of
2537 Å. The integrated dose (i.e. UV intensity x
exposure time) for erasure should be a minimum
of 15 W-sec/cm
age is approximately 15 to 20 minutes using an ul-
traviolet lamp with 12000 µW/cm
The M27C1001 should be placed within 2.5 cm (1
inch) of the lamp tubes during the erasure. Some
lamps have a filter on their tubes which should be
removed before erasure.
2
. The erasure time with this dos-
2
power rating.
M27C1001
9/17

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