CY7C1347G-133AXC Cypress Semiconductor Corp, CY7C1347G-133AXC Datasheet - Page 16

IC SRAM 4.5MBIT 133MHZ 100LQFP

CY7C1347G-133AXC

Manufacturer Part Number
CY7C1347G-133AXC
Description
IC SRAM 4.5MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1347G-133AXC

Memory Size
4.5M (128K x 36)
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Memory Configuration
128K X 36
Clock Frequency
133MHz
Access Time
4ns
Supply Voltage Range
3.135V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-1741
CY7C1347G-133AXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1347G-133AXC
Manufacturer:
CYPRESS
Quantity:
82
Part Number:
CY7C1347G-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1347G-133AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1347G-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-05516 Rev. *I
18. In this diagram, when CE is LOW, CE
19. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW, and BW
Data Out (Q)
Data In (D)
ADDRESS
BW[A :B]
ADSP
ADSC
BWE,
ADV
CLK
GW
OE
CE
BURST READ
High-Z
t ADS
t CES
t AS
A1
t ADH
t CEH
t AH
t CH
t
OEHZ
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t CYC
(continued)
t ADS
1
t CL
t DS
is LOW, CE
Single WRITE
D(A1)
t ADH
t DH
2
is HIGH, and CE
A2
Figure 6. Write Cycle Timing
D(A2)
DON’T CARE
3
is LOW. When CE is HIGH, CE
D(A2 + 1)
t WES
BURST WRITE
t WEH
UNDEFINED
D(A2 + 1)
x
LOW.
ADV suspends burst
[18, 19]
D(A2 + 2)
1
ADSC extends burst
is HIGH, CE
D(A2 + 3)
2
is LOW, or CE
t ADS
A3
D(A3)
t ADH
t
ADVS
t WES
Extended BURST WRITE
3
D(A3 + 1)
is HIGH.
t
t WEH
ADVH
CY7C1347G
D(A3 + 2)
Page 16 of 24
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