CY14B256LA-SP25XI Cypress Semiconductor Corp, CY14B256LA-SP25XI Datasheet - Page 12
![IC NVSRAM 256KBIT 25NS 48SSOP](/photos/28/78/287845/ssop-48_sml.jpg)
CY14B256LA-SP25XI
Manufacturer Part Number
CY14B256LA-SP25XI
Description
IC NVSRAM 256KBIT 25NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Specifications of CY14B256LA-SP25XI
Memory Size
256K (32K x 8)
Package / Case
*
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Organization
32 K x 8
Access Time
25 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Operating Current
70 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256LA-SP25XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Note
Document Number: 001-54707 Rev. *F
17. WE must be HIGH during SRAM read cycles.
18. HSB must remain HIGH during READ and WRITE cycles.
19. If WE is low when CE goes low, the outputs remain in the high impedance state.
20. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Data Output
Data Input
Address
Address
WE
CE
CE
OE
I
IH
CC
WE
CE
during address transitions.
High Impedance
Figure 6. SRAM Read Cycle #2: CE and OE Controlled
Standby
Figure 7. SRAM Write Cycle #1: WE Controlled
Figure 8. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
t
SA
PU
t
LZCE
t
LZOE
t
Address Valid
AA
High Impedance
t
t
ACE
AW
t
Address Valid
t
PWE
t
SCE
HZWE
Address Valid
t
t
SCE
DOE
t
t
PWE
RC
t
Active
WC
Input Data Valid
t
WC
t
SD
t
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[18, 19, 20]
[18, 19, 20]
t
t
HD
HD
t
HA
t
HA
[17, 18]
t
t
HZCE
HZOE
t
PD
CY14B256LA
Page 12 of 22
[+] Feedback