MR2A16AVYS35 EverSpin Technologies Inc, MR2A16AVYS35 Datasheet - Page 6

IC MRAM 4MBIT 35NS 44TSOP

MR2A16AVYS35

Manufacturer Part Number
MR2A16AVYS35
Description
IC MRAM 4MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheet

Specifications of MR2A16AVYS35

Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
4M (256K x 16)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 105°C
Package / Case
44-TSOP II
Word Size
16b
Density
4Mb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Pin Count
44
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1012
MR2A16AVYS35
Everspin Technologies © 2009
Electrical Specifications
1
Parameter
Input leakage current
Output leakage current
Output low voltage
Output high voltage
Parameter
AC active supply current - read modes
AC active supply current - write modes
AC standby current
CMOS standby current
All active current measurements are measured with one address transition per cycle and at minimum cycle time.
(I
(I
(I
(I
(I
(V
MR2A16A (Commercial)
MR2A16AC (Industrial)
MR2A16AV (Extended)
(V
no other restrictions on other inputs
(E ≥ V
(V
OL
OL
OH
OH
OUT
DD
DD
DD
= +4 mA)
= +100 μA)
= -4 mA)
= -100 μA)
= 0 mA, V
= max)
= max, E = V
= max, f = 0 MHz)
DD
- 0.2 V and V
DD
= max)
IH
)
In
V
SS
+ 0.2 V or ≥ V
Table 2.4 Power Supply Characteristics
Symbol
I
I
V
V
lkg(I)
lkg(O)
Table 2.3 DC Characteristics
1
OL
OH
1
DD
- 0.2 V)
Min
-
-
-
2.4
V
DD
6
- 0.2
Symbol
I
I
I
I
DDR
DDW
SB1
SB2
Document Number: MR2A16A Rev. 8, 7/2009
Typical
-
-
-
-
Typical
55
105
105
105
18
9
Max
±1
±1
0.4
V
-
Max
80
155
165
165
28
12
SS
MR2A16A
+ 0.2
Unit
μA
μA
V
V
Unit
mA
mA
mA
mA

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