CAT93C46WI-GT3 ON Semiconductor, CAT93C46WI-GT3 Datasheet - Page 2

IC EEPROM 1KBIT 2MHZ 8SOIC

CAT93C46WI-GT3

Manufacturer Part Number
CAT93C46WI-GT3
Description
IC EEPROM 1KBIT 2MHZ 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT93C46WI-GT3

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8 or 64 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
128 K x 8 or 64 x 16
Interface Type
Microwire
Maximum Clock Frequency
2 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
1 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
93C46WI-GT3
CAT93C46WI-GT3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT93C46WI-GT3
Manufacturer:
ON
Quantity:
3 000
Part Number:
CAT93C46WI-GT3
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Block Mode, V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
N
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
END
Symbol
Symbol
V
V
V
V
I
I
V
V
T
I
I
V
V
CC1
CC2
I
SB1
SB2
(Note 3)
I
OL1
OH1
OL2
OH2
LO
DR
IH1
IH2
IL1
IL2
LI
CC
= 5 V, 25°C
Endurance
Data Retention
Power Supply Current (Write)
Power Supply Current (Read)
Power Supply Current (Standby) (x8 Mode)
Power Supply Current (Standby) (x16Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
Parameter
Parameter
(Note 2)
(V
http://onsemi.com
CC
= +1.8 V to +5.5 V, T
CC
2
+ 1.5 V, for periods of less than 20 ns.
V
4.5 V v V
4.5 V v V
1.8 V v V
1.8 V v V
4.5 V v V
4.5 V v V
1.8 V v V
1.8 V v V
ORG = Float or V
V
V
V
OUT
Test Conditions
IN
IN
IN
I
I
OH
OH
ORG = GND
I
f
V
f
V
OL
SK
SK
= GND or V
= GND or V
I
CS = GND
CS = GND
CS = GND
= GND to V
1,000,000
OL
CC
CC
= GND to V
= −400 mA
= −100 mA
= 2.1 mA
−65 to +150
−0.5 to +6.5
= 1 MHz
= 1 MHz
CC
Min
100
= 1 mA
= 5.0 V
= 5.0 V
A
CC
CC
CC
CC
CC
CC
CC
CC
Value
= −40°C to +85°C, unless otherwise specified.)
+ 0.5 V. During transitions, the voltage on any pin may
< 5.5 V
< 5.5 V
< 4.5 V
< 4.5 V
< 5.5 V
< 5.5 V
< 4.5 V
< 4.5 V
CC
CC
CC
CC
CC
,
,
,
V
V
CC
CC
−0.1
Min
2.4
2
0
x 0.7
− 0.2
Program / Erase Cycles
Units
Years
V
V
V
CC
CC
CC
Max
Units
500
0.8
0.4
0.2
°C
1
2
1
1
1
V
x 0.2
+ 1
+ 1
Units
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V

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