1N5407-G Comchip Technology, 1N5407-G Datasheet - Page 2

• Manufacturer Part Number: 1N5407-G
• Description: Diodes - General Purpose, Power, Switching VR=800V, IO=3A
• Manufacturer: Comchip Technology

Specifications of 1N5407-G

• Rohs: yes

QW-BG015
General Purpose Silicon Rectifiers
Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G)
3.0
2.0
1.0
200
100
50
10
0
Fig.3 - Maximum Non-repetitive Forward
0
1
Fig.1 -
8.3ms single half sine-wave
(JEDEC Method)
Single phase half wave 60Hz
Resistive or inductive load
0.375” (9.5mm) lead length
25
Surge
Ambient Temperature, (°C)
Number of Cycles at 60Hz
Maximum
Derating Curve
50
Curren
75
10
Forward Current
Per Bridge Element
100
125
150
100
10.0
0.01
0.01
1.0
0.1
100
0.1
10
Percent of Rated Peak Reverse Voltage, (V)
1
0.4
Fig.2 - Typical
Fig.4 - Typical Reverse Characteristics
0
Instantaneous Forward Voltage, (V)
0.6
20
Characteristics Per Bridge Element
Per Bridge Element
0.8
40
Instantaneous
1.0
60
T
T
J
J
=100°C
=25°C
1.2
80
T
Pulse width=300us
1% Duty cycle
J
=25°C
100
1.4
Forward
120
1.6
140
1.8
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