MR2A16ACYS35 EverSpin Technologies Inc, MR2A16ACYS35 Datasheet - Page 5

• Manufacturer Part Number: MR2A16ACYS35
• Description: IC MRAM 4MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR2A16ACYS35

• Memory Size: 4M (256K x 16)
• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Memory Configuration: 256K X 16
• Access Time: 35ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1011; MR2A16ACYS35

Direct Current (dc)
Freescale Semiconductor
Input leakage current
Output leakage current
Output low voltage
Output high voltage
ac active supply current — read modes
ac active supply current — write modes
ac standby current
CMOS standby current
NOTES:
(I
(I
(I
(I
(I
(V
(V
(no other restrictions on other inputs)
(E ≥ V
(V
1
OL
OL
OH
OH
Address input capacitance
Control input capacitance
Input/output capacitance
NOTES:
Out
DD
DD
DD
1
= +4 mA)
= +100 μA)
All active current measurements are measured with one address transition per cycle.
= –4 mA)
= –100 mA)
= 0 mA, V
= max)
= max, E = V
= max, f = 0 MHz)
DD
f = 1.0 MHz, dV = 3.0 V, T
– 0.2 V and V
Parameter
DD
Parameter
= max)
IH
)
Parameter
In
≤ V
MR0A16A Advanced Information Data Sheet, Rev. 0
SS
Table 6. Power Supply Characteristics
A
+ 0.2 V or ≥ V
= 25˚C, periodically sampled rather than 100% tested.
Table 5. dc Characteristics
Table 7. Capacitance
1
1
Symbol
C
C
C
I/O
In
In
DD
– 0.2 V)
Symbol
I
I
lkg(O)
V
V
lkg(I)
OH
OL
Typ
—
—
—
Symbol
1
I
I
I
I
DDW
V
DDR
SB1
SB2
DD
Min
2.4
—
—
—
– 0.2
Max
TBD
TBD
TBD
TBD
Typ
6
6
8
Typ
—
—
—
—
Electrical Specifications
TBD
TBD
TBD
TBD
Max
V
SS
Unit
Max
pF
pF
pF
0.4
±1
±1
—
+ 0.2
Unit
mA
mA
mA
mA
Unit
μA
μA
V
V
5