M29W160FB70N3F NUMONYX, M29W160FB70N3F Datasheet - Page 47

• Manufacturer Part Number: M29W160FB70N3F
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W160FB70N3F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M29W160FB70N3FCT

Table 25.
x 16
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
3Ah
3Ch
3Eh
4Ah
4Ch
40h
48h
36h
38h
42h
44h
46h
x 8
CFI query system interface information
00B5h M29W320FT/B
00C5h M29W320FT/B
000Ah Typical timeout per individual block erase = 2
0027h
0036h
0000h M29W160FT/B
0000h M29W160FT/B
0004h Typical timeout per single byte/word program = 2
0000h Typical timeout for minimum size write buffer program = 2
0000h Typical timeout for full chip erase = 2
0004h M29W160FT/B
0005h M29W320FT/B
0000h Maximum timeout for write buffer program = 2
0003h M29W160FT/B
0004h M29W320FT/B
0000h Maximum timeout for chip erase = 2
Data
V
V
CC
CC
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 mV
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 mV
logic supply minimum Program/Erase voltage
logic supply maximum Program/Erase voltage
V
V
V
V
Maximum timeout for byte/word program = 2
Maximum timeout for byte/word program = 2
Maximum timeout per individual block erase = 2
Maximum timeout per individual block erase = 2
PP
PP
PP
PP
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
[programming] supply minimum Program/Erase voltage
[programming] supply minimum Program/Erase voltage
[programming] supply maximum Program/Erase voltage
[programming] supply maximum Program/Erase voltage
Description
n
n
times typical
ms
n
n
ms
times typical
n
μs
n
μs
n
n
times typical
times typical
n
n
times typical
times typical
256 μs
512 μs
12.5 V
11.5 V
Value
16 μs
2.7 V
3.6 V
16 s
NA
NA
NA
1 s
NA
NA
8 s
NA
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