SBYV27-150-E3/51 Vishay Semiconductors, SBYV27-150-E3/51 Datasheet
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SBYV27-150-E3/51
Specifications of SBYV27-150-E3/51
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SBYV27-150-E3/51 Summary of contents
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... Operating junction and storage temperature range Document Number: 88736 For technical questions within your region, please contact one of the following: Revision: 22-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, SBYV27-50 thru SBYV27-200 FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • ...
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... SBYV27-50 thru SBYV27-200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 3.0 A forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction 4 MHz capacitance Note Pulse test: 300 μs pulse width, duty cycle ≤ ...
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... Percent of Rated Peak Reverse Voltage (%) Fig Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Document Number: 88736 For technical questions within your region, please contact one of the following: Revision: 22-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, SBYV27-50 thru SBYV27-200 100 ° ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...