EGF1D-E3/19A Vishay Semiconductors, EGF1D-E3/19A Datasheet
EGF1D-E3/19A
Specifications of EGF1D-E3/19A
Related parts for EGF1D-E3/19A
EGF1D-E3/19A Summary of contents
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... SYMBOL EGF1A RRM V 35 RMS 125 ° F(AV) I FSM STG DiodesEurope@vishay.com This datasheet is subject to change without notice. EGF1A thru EGF1D EGF1B EGF1C EGF1D UNIT 100 150 200 V 70 105 140 V 100 150 200 V 1 175 ° ...
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... EGF1A thru EGF1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance Note (1) Pulse test: 300 μs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ...
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... Fig Typical Junction Capacitance 100 10 1 0.1 80 100 0.01 Fig Typical Transient Thermal Impedance 0.066 (1.68) MIN. 0.060 (1.52) 0.108 (2.74) 0.098 (2.49) 0.114 (2.90) 0.094 (2.39) DiodesEurope@vishay.com This datasheet is subject to change without notice. EGF1A thru EGF1D ° 1.0 MHz sig p 100 Reverse Voltage (V) 0 100 t - Pulse Duration (s) Mounting Pad Layout 0 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...