NGTG15N60S1EG ON Semiconductor, NGTG15N60S1EG Datasheet - Page 5

• Manufacturer Part Number: NGTG15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTG15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

1000
1000
100
100
10
10
1
1
5
175
t
d(off)
t
d(on)
t
t
f
r
225
15
V
CE
Figure 15. Switching Time vs. V
Figure 13. Switching Time vs. R
, COLLECTOR−EMITTER VOLTAGE (V)
275
25
R
G
, GATE RESISTOR (W)
325
35
1000
0.01
375
100
45
0.1
10
1
1
V
Figure 17. Reverse Bias Safe Operating Area
425
GE
55
= 15 V, T
V
CE
TYPICAL CHARACTERISTICS
475
V
V
I
T
65
, COLLECTOR−EMITTER VOLTAGE (V)
C
J
V
I
R
T
CE
GE
C
= 15 A
J
GE
= 150°C
G
= 15 A
= 150°C
CE
= 400 V
= 15 V
= 22 W
G
C
= 15 V
525
= 125°C
75
t
http://onsemi.com
t
10
d_off
d_on
t
t
f
r
575
85
5
1000
0.01
100
1.2
0.9
0.6
0.3
0.1
10
0
1
100
1
175
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
I
R
T
C
J
GE
G
225
= 15 A
= 150°C
V
V
= 22 W
= 15 V
CE
CE
Figure 14. Switching Loss vs. V
C
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
dc operation
= 25°C
275
1000
10
325
1 ms
375
425
100
100 ms
475
50 ms
Eon
CE
525
Eoff
1000
575