AUIRGPS4067D1 International Rectifier, AUIRGPS4067D1 Datasheet - Page 7
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AUIRGPS4067D1
Manufacturer Part Number
AUIRGPS4067D1
Description
IGBT Transistors Automotive 600V 160A Trench IGBT
Manufacturer
International Rectifier
Datasheet
1.AUIRGPS4067D1.pdf
(13 pages)
Specifications of AUIRGPS4067D1
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.05 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
240 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Package / Case
TO-247
Mounting Style
Through Hole
Factory Pack Quantity
25
www.irf.com
V
100000
10000
CC
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
1000
100
60
55
50
45
40
35
30
10
= 400V; V
Fig. 23 - Typ. Capacitance vs. V
200
Fig. 19 - Typ. Diode I
0
Fig. 21 - Typ. Diode E
0
50
400
Coes
V
Cres
100
Cies
GE
GE
100
T
= 15V; I
= 0V; f = 1MHz
600
J
= 175°C
di F /dt (A/μs)
200
150
R G = 20
V CE (V)
I F (A)
800
F
= 120A; T
200
RR
300
1000
RR
vs. di
250
R G = 50
vs. I
R G = 4.7
R G = 10
400
1200 1400
F
J
F
300
/dt
CE
= 175°C
350
500
35000
30000
25000
20000
15000
10000
5000
18
16
14
12
10
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
V
8
6
4
8
6
4
2
0
Fig. 22 - V
Fig. 20 - Typ. Diode Q
200
CC
8
0
50
= 400V; V
V
400
CC
10
Q G , Total Gate Charge (nC)
50
AUIRGPS4067D1
GE
= 400V; T
600
2
I
T sc
CE
V CES = 400V
V CES = 300V
vs. Short Circuit Time
GE
100
di F /dt (A/μs)
12
= 120A
800 1000 1200 1400 1600
V GE (V)
= 15V; T
C
10
= 25°C
150
RR
14
120A
240A
60A
J
vs. di
= 175°C
I sc
200
16
F
4.7
/dt
GE
250
18
900
800
700
600
500
400
300
200
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